Advancing Nanoribbon Transistors with Monolayer 2D Semiconductors: Insights from Stanford, HORIBA, and SLAC

Key Takeaways

Stanford University researchers developed high-performance nanoribbon transistors using monolayer transition metal dichalcogenides (TMDs).
The transistors achieved unprecedented channel dimensions of 25 nm in width and 50 nm in length, with significant on-state currents.
Findings indicate that these TMD nanoribbons could serve as essential components for the future of nanosheet transistors.

Innovative Progress in Nanoscale Transistors

A new paper titled “Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides” details groundbreaking work from Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory. This research provides valuable insights into the reduction of channel dimensions in nanoscale transistors.

Nanoscale transistors are essential for advancing electronic devices, necessitating a substantial reduction in all channel dimensions, including length, width, and thickness. Monolayer two-dimensional semiconductors (2DS) are promising for achieving ultimate thickness scaling; however, high performance has mostly been observed in channels that are micrometers wide.

The study reports the successful fabrication of both n-type and p-type nanoribbon transistors made from monolayer 2DS. These devices were created utilizing a multi-patterning process, resulting in channel widths reduced to 25 nm and lengths to 50 nm. Notably, the research introduced ‘anchored’ contacts, which enhanced device yield significantly.

Advanced imaging techniques, such as tip-enhanced photoluminescence, were employed to investigate electrical properties at the nanoscale. These methods indicated minimal edge degradation in the devices, which is a crucial factor in maintaining performance.

The transistors demonstrated impressive on-state currents: n-type MoS2 achieved 560 µA µm-1, WS2 reached 420 µA µm-1, and p-type WSe2 exhibited 130 µA µm-1 at a drain-to-source voltage of 1 V. Remarkably, these outcomes surpass previous reports for single-gated nanoribbons, with WS2 exceeding earlier findings by over 100 times, even in enhancement-mode transistors.

The overall implications of this research point toward the potential of top-down patterned 2DS nanoribbons as critical building blocks for the next generation of nanosheet transistors. Researchers believe that these advancements may significantly enhance the performance and scalability of future electronic devices.

For more technical details, the full paper can be accessed on arXiv with the citation provided.

The content above is a summary. For more details, see the source article.