Key Takeaways

• The FAMES Pilot Line has opened its second Open-Access Call for semiconductor stakeholders to enhance European tech sovereignty.
• New process design kits (PDKs) introduced include advanced RF components and the FD-SOI 10nm technology PDK.
• The initiative aims to strengthen Europe’s semiconductor capabilities and foster innovation in various applications.

2026 Open-Access Call for Semiconductor Innovation

The FAMES Pilot Line has officially launched its second Open-Access Call aimed at European semiconductor stakeholders, enhancing the EU’s initiatives to develop new chip architectures. An online launch event on March 9, 2026, provided comprehensive information regarding available technologies and the application process.

Building on the success of the 2025 open-access initiative, this year’s program introduces four new process design kits (PDKs) and advancements in key technologies such as integrated radio frequency (RF) components and power-management integrated circuits (PMIC). The pilot line encourages participation from design houses, fabless companies, foundries, integrated device manufacturers, material and tool suppliers, as well as universities and research institutions. Interested parties can submit User Requests during the two-month Open-Access Call or throughout the year via Spontaneous User Requests. Detailed user guidelines are available on the FAMES website.

Innovative Process Design Kits

The newly introduced PDKs include:

• 15 GHz LiNbO3 Bulk Acoustic Wave Resonator (BAW-SMR) Filter PDK and 7-15 GHz AlN/ScAlN BAW RF Filter PDK: These highly miniaturized RF components are designed for efficient band pass filtering in the FR3 range.

• Phase Change Material-based RF Switch PDK: This PDK allows users to create and integrate their own demonstrators on high-resistivity 300 mm silicon wafers for the first time.

• Magnetic Integration on Silicon (MagIC) Technology PDK: Users can integrate micro-inductors directly onto their power management systems-on-chip (SoCs), enhancing power-delivery efficiency.

• FD-SOI 10nm Pathfinding PDK: This kit is designed for testing capabilities of the advanced low-power technology node and is now available for licensing and delivery.

Susana Bonnetier, chairperson of the open-access initiative, stated that the 2026 Open-Access Call reflects two years of successful R&D in advancing European technology. Notably, participants can now access and test sovereign RF filter and switch technologies tailored to their designs.

Strategic Goals of the FAMES Project

Launched in December 2023 by the Chips Joint Undertaking, coordinated by CEA-Leti, the FAMES project aims to revolutionize semiconductor innovation in Europe. The key objectives are:

1. Providing a domestic semiconductor pilot line that features:

   • Two generations of FD-SOI technology at the 10nm and 7nm nodes.
   • Various options for non-volatile memory (NVM) with metallic interconnects above transistors.
   • Development of RF components, including passives, switches, and filters.
   • 3D technological stacking options for enhanced integration.

2. Promoting FAMES technologies to help Europe keep pace with the miniaturization trends in electronics, thereby reinforcing its leadership in semiconductor markets.

The consortium behind FAMES includes prominent research and technology organizations and academic institutions from across Europe, including imec, Fraunhofer, Tyndall, and more.

For further details, participants can visit the FAMES website to access guidelines and information related to this initiative.

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