Navitas Unveils Isolated Through-Hole Package for SiC MOSFETs, Optimizing Direct-Cooled Thermal Management

Key Takeaways

Navitas Semiconductor launches the UHV-TO-247-4-ISO package, enhancing the performance of SiC MOSFETs with integrated high-voltage isolation.
The thermal management design improves power dissipation by up to 150%, increasing power density and reliability.
This innovative package supports multiple voltage ratings (1200V, 2300V, 3300V) and is compatible with existing high-voltage systems.

Innovative Thermal Management Solution

Navitas Semiconductor (Nasdaq: NVTS), renowned for its advances in GaN and SiC power semiconductors, has introduced its UHV-TO-247-4-ISO package. This cutting-edge solution is designed to deliver exceptional performance in high-voltage applications, specifically tailored for 1200V to 3300V GeneSiC SiC MOSFETs.

The UHV-TO-247-4-ISO package features over 12 mm pin-to-pin creepage and boasts an integrated isolation rating exceeding 6000 V. This eliminates the need for external high-voltage components, simplifying system design and enhancing overall performance. Compared to traditional non-isolated through-hole packages, this new design provides significant improvements in thermal management and EMI performance.

System Benefits of the New Package

The new package introduces several key benefits:

Integrated High-Voltage Isolation: Utilizing an Aluminum Nitride (AlN) substrate, the package achieves up to 6000 V of built-in isolation, streamlined for efficiency without the requirement for separate isolation materials.
Direct-Cooled Thermal Management: The reflow-compatible thermal pad allows for direct mounting to both air and liquid-cooled heat sinks, which decreases thermal resistance by up to 60%. This enhancement facilitates a power dissipation capacity boost of 150%, leading to an overall increase in power density, reliability, and cost-effectiveness.
Reduced EMI and Improved Efficiency: The integration of high-voltage isolation minimizes stray capacitance, leading to lower common-mode noise and reduced radiated electromagnetic interference (EMI). This promotes higher switching speeds, improved system efficiency, and decreased costs associated with EMI mitigation.

Furthermore, the device’s construction employs active metal brazing (AMB) technology and a robust heatsink interface, maximizing performance during thermal cycling and improving longevity.

Easy Integration and Versatility

The UHV-TO-247-4-ISO package is compatible with the industry-standard high-voltage TO-247-4 footprint, making system integration straightforward. This new offering enhances reliability and performance without necessitating redesigns.

Paul Wheeler, VP & GM of the SiC Business Unit at Navitas, emphasizes that balancing thermal management with high-voltage isolation is a fundamental challenge in power system design. He notes that the new package delivers the advanced performance equivalent to a power module, significantly benefiting emerging applications like immersion-cooled and liquid-cooled power electronics.

Diverse Application Potential

This versatile packaging solution is available in voltage ratings of 3300V, 2300V, and 1200V, paving the way for advancements in various applications such as high-voltage grid-tied power conversion systems, solid-state transformers, battery energy storage systems, and renewable energy initiatives.

About Navitas Semiconductor

Navitas Semiconductor stands at the forefront of power semiconductor innovation, with a particular focus on gallium nitride (GaN) and silicon carbide (SiC) technologies. With over three decades of expertise, Navitas drives advancements across AI data centers, energy infrastructure, and industrial electrification. The company is dedicated to enhancing power efficiency and system density, holding more than 300 patents to date.

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