Teledyne HiRel Unveils Isolated GaN Gate Driver for Enhanced Power Conversion Efficiency

Key Takeaways

Teledyne HiRel Semiconductors launches the TDGD85110EP, an isolated gate driver for GaN power designs.
This device simplifies high-performance power conversion systems by integrating isolation and bias supply.
Key features include 5 kV RMS isolation, low propagation delay, and wide operational temperature range.

Introduction of the TDGD85110EP

Teledyne HiRel Semiconductors has introduced the TDGD85110EP, an innovative isolated, single-channel gate driver designed to facilitate the use of gallium nitride (GaN) transistors in advanced power conversion systems. With over a decade of experience in GaN technology for aerospace, defense, and industrial applications, Teledyne aims to meet growing demands for efficiency and power density in modern power systems.

As power systems evolve towards smaller sizes and increased performance, the adoption of GaN technology is on the rise due to its ability to operate at higher switching frequencies. This enables a reduction in magnetic component sizes but presents challenges for gate-drive performance. The TDGD85110EP addresses these challenges by integrating essential functions—signal isolation and an isolated bias supply—into a single, compact device. This integration eliminates the necessity for external bias supplies or high-side bootstrap circuits, streamlining the design process.

This unique approach leads to a lower component count, enhanced system efficiency, and simplified designs suitable for a variety of applications. These include ac-dc and dc-dc power supplies, battery management systems, motor drives, and fast-charging infrastructures, as well as uninterruptible power supplies (UPS) and systems used in aerospace and defense.

Mont Taylor, Vice President of Business Development at Teledyne HiRel Semiconductors, highlighted the benefits, stating, “The TDGD85110EP integrates key gate-drive functions into a single device, helping customers accelerate GaN adoption while reducing system complexity. By combining isolation and bias generation in a compact solution, the device enables designers to more fully realize the efficiency and power-density advantages of GaN technology.”

Key Features and Performance

The TDGD85110EP offers several noteworthy specifications:

5 kV RMS Galvanic Isolation: This ensures safety and effective separation of high-voltage components from the control circuitry.
Common-Mode Transient Immunity (CMTI): It exceeds 100 V/ns, providing robust performance in dynamic conditions.
Fast Propagation Delay: With a relatively short delay of 50 ns, the device ensures quick response times.
Wide Input Support: Capable of handling high-voltage inputs above 10 V and low-voltage inputs over 6 V.
Comprehensive Testing: The device is 100% tested for both ac and dc parameters across three different temperature ranges.
Temperature Qualification: It operates effectively in extreme temperatures, from -55°C to +125°C, making it suitable for harsh environments.

Teledyne HiRel Semiconductors Overview

Teledyne HiRel Semiconductors is a key player in providing high-reliability semiconductor solutions specifically suited for aerospace, defense, space, and industrial markets. The entire company is focused on addressing critical challenges faced by customers through a blend of standard, semi-custom, and fully custom offerings. The overarching Teledyne Technologies group encompasses a diverse array of advanced digital imaging products, instrumentation, and electronics solutions for demanding applications, reinforcing its industry leadership across multiple sectors.

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