FAMES Pilot Line Officially Launched

Key Takeaways

  • The FAMES initiative enhances Europe’s semiconductor capabilities, facilitating the transition from research to industrial deployment.
  • New cleanroom facilities and advanced tools will support the development of next-generation semiconductor technologies.
  • The project, funded with €830 million, aims to strengthen Europe’s technological autonomy and reduce the gap between research and production.

European Semiconductor Advancements with FAMES Initiative

The FAMES project, notable for establishing a 300mm production line, is now operational, boosting Europe’s semiconductor capabilities. By aligning with major international conferences, its results indicate successful functioning as a strategic initiative for European technological sovereignty. The project’s purpose is to facilitate the faster transition from research to industrial deployment.

A cleanroom extension has been inaugurated at CEA‑Leti in Grenoble, enhancing the pilot line that serves as an open-access platform. Primarily aimed at European startups, SMEs, and research organizations, this facility is also available to international partners. It allows users to prototype and qualify advanced semiconductor technologies, significantly mitigating risks prior to large-scale manufacturing.

Since becoming operational, the pilot line has achieved progress in several key areas, such as advanced substrates, ferroelectric embedded non-volatile memories, next-generation FD-SOI technology, 3D integration methods, and high-performance RF passive components. These advancements are critical for future chip designs and applications.

Jean-René Lèquepeys, deputy director and CTO of CEA‑Leti, highlighted the initiative’s aim to develop sub-10nm FD-SOI chips that promise improved performance in density, power consumption, and speed. Recent technical milestones include successful demonstrations of 2.5V SOI CMOS devices fabricated at a 400°C thermal budget, overcoming challenges related to 3D sequential integration.

The new facility increases CEA‑Leti’s cleanroom area to 14,000 square meters and houses over 80 advanced manufacturing tools. With a focus on minimizing the environmental footprint, its design incorporates high-performance insulation and systems for waste-energy recovery.

FAMES builds upon France’s 2030 NextGen project and has gained traction under the EU Chips Act, both aiming to bridge the gap between lab research and industrial readiness by promoting an open environment for technology development. Dominique Noguet, vice-president at CEA‑Leti, stated that the project’s early achievements reflect its operational role in advancing and transitioning new technologies for industry use.

The total investment for FAMES stands at €830 million, co-financed by the European Commission and participating Member States. This initiative involves 11 partners across eight nations, aiming to bolster Europe’s technological self-sufficiency in critical semiconductor sectors. Anne-Isabelle Etienvre, director general of the CEA, emphasized that FAMES represents a crucial opportunity for Europe to fast-track technology maturation and industrial transfer, aligning with the goals of the Chips Act.

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