Key Takeaways

• Experts from the University of Bristol and Nagoya University are collaborating to develop advanced semiconductors to enhance energy efficiency and reduce emissions.
• Nobel Prize winner Professor Hiroshi Amano will visit Bristol to discuss next-generation power semiconductors, emphasizing the benefits of gallium nitride (GaN) technology.
• The initiative, supported by the International Science Partnerships Fund, aims to drive innovations that will support the UK’s net-zero goals.

Collaboration for Sustainable Semiconductor Innovation

Top experts from the University of Bristol and Nagoya University are joining forces to advance semiconductor technology, which is crucial for energy-efficient travel and emission reduction. The collaboration is part of an initiative supported by the International Science Partnerships Fund (ISPF) and seeks to create next-generation semiconductor chips for various applications.

Professor Hiroshi Amano, a Nobel Prize winner renowned for his work on blue light-emitting diodes (LEDs), is set to visit Bristol next month. His expertise will contribute significantly to the research being conducted at the University’s Centre for Device Thermography and Reliability (CDTR). This exchange program aims to enhance the efficiency of power semiconductors, which are vital for reducing energy consumption in electric vehicles and improving the input of renewable energy into the national grid.

Martin Kuball, a Professor of Physics at Bristol, emphasizes the potential impact of this research. He envisions a future where electric cars can charge in under five minutes, powered by renewable energy sources operating at maximum efficiency. He highlights the importance of improving semiconductor devices to minimize energy wastage in renewable energy applications.

Professor Amano, who leads the Centre for Integrated Research of Future Electronics, will present insights on the manufacturing of high-efficiency power semiconductors. He notes that replacing silicon-based power devices with gallium nitride (GaN) technology can cut total electricity consumption by 25%. GaN is recognized for its efficiency, speed, and high-voltage capabilities, making it a crucial component in establishing renewable energy grids.

The University of Bristol is also spearheading the £11 million Innovation and Knowledge Centre (IKC) REWIRE, alongside partnerships with the Universities of Warwick and Cambridge. This center focuses on developing innovative semiconductor technologies that align with the UK’s net-zero ambitions.

Professor Kuball expressed excitement about hosting Professor Amano, citing the importance of collaboration in tackling the complex challenges faced in semiconductor research. He believes the partnership will inspire both current and future researchers, with opportunities for Bristol students and staff to gain valuable experience through exchanges with Nagoya University.

The ISPF, which promotes international scientific collaboration, is funded by the Department of Science, Innovation and Technology (DSIT) in the UK and is facilitated in part by the British Council.

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