Expanding the STCC Formula: Insights from Science Tokyo

Key Takeaways

Researchers at the Institute of Science Tokyo published a paper on a new formula for high-NA EUV lithography.
The study emphasizes the importance of polarization effects in accurate imaging simulations.
The technical paper appears in the Journal of Micro/Nanopatterning, Materials, and Metrology.

New Formula Enhances High-NA EUV Lithography

A new technical paper titled “Source-position-dependent transmission cross coefficient formula including polarization and mask three-dimensional effects in high-numerical-aperture extreme ultraviolet lithography” has been released by researchers at the Institute of Science Tokyo. This research builds upon findings presented at the SPIE Advanced Lithography + Patterning conference in May 2026.

The main focus of the paper is to address the polarization effect, which has been identified as significant in high-numerical-aperture extreme ultraviolet (EUV) lithography. The authors, Hiroyoshi Tanabe, Moe Sugiyama, Masayuki Shimoda, and Atsushi Takahashi, state that the objective of their work is to extend the existing source-position-dependent transmission cross coefficient (STCC) formula. By incorporating the polarization effect, the revised formula aims to facilitate accurate and rapid simulations of polarization-dependent imaging within the realm of high-NA EUV lithography.

The findings underscore the necessity of considering polarization in advanced lithography techniques, particularly as the industry moves towards higher-resolution fabrication processes. The implications of this work could enhance the performance and precision of lithographic systems, which are crucial for various applications in semiconductor manufacturing and nanofabrication.

The paper has been published in the Journal of Micro/Nanopatterning, Materials, and Metrology, where it can be accessed for further details (Vol. 25, Issue 3, 031604, May 2026). The DOI link for the technical paper is https://doi.org/10.1117/1.JMM.25.3.031604.

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