Key Takeaways
- A new semiconductor inspection platform developed by Nagoya University and Photoelectron Soul Inc. set for validation with KIOXIA.
- The technology features durable GaN photocathodes, improving defect detection in semiconductor manufacturing.
- Innovative Digital Selective e-Beaming allows precise non-contact inspections of nanoscale transistors and complex 3D structures.
Groundbreaking Semiconductor Inspection Technology
A collaboration between Nagoya University and Photoelectron Soul Inc. (PeS) has led to the development of a new semiconductor inspection and metrology platform, which is set to begin validation at KIOXIA Iwate Corporation by late September 2025. This cutting-edge technology is based on a gallium nitride (GaN)-based electron beam (e-beam) system and addresses long-standing challenges in semiconductor manufacturing.
The platform aims to enhance defect detection and production yields, particularly in complex nanoscale and 3D semiconductor devices. Traditional e-beam systems using semiconductor photocathodes have faced limitations due to their fragility. However, researchers at PeS and Nagoya University have developed GaN photocathodes that boast over twenty times the durability of older models, marking a significant advancement in the field.
Furthering this innovation, PeS has created an electron gun optimized for GaN photocathodes, ensuring the necessary stability and operational reliability for semiconductor manufacturing environments.
Central to PeS’s offerings is the patented Digital Selective e-Beaming (DSeB) technique. This method synchronizes laser light irradiation of the photocathode with e-beam scanning in a scanning electron microscope (SEM), enabling pixel-level control over e-beam intensity and location. This precision allows for unprecedented inspection capabilities that were previously difficult to achieve with traditional methods.
One significant application of DSeB is in non-contact electrical inspection of nanoscale transistors. Conventional methods struggle to test densely packed transistors, but PeS’s technique allows for the targeted irradiation of specific regions, enabling the observation of switching behavior through electron-beam-induced charging, all without physical contact.
Another critical use addresses the challenges of inspecting high-aspect-ratio structures in advanced devices, such as deep silicon trenches. Traditional inspection methods falter due to the complexity and depth of these structures. DSeB allows for targeted inspection of trench bottoms, revealing potential defects and residues within these difficult-to-access areas.
The real-world validation at KIOXIA Iwate will focus on improving defect detection, root cause analysis, and overall manufacturing yield. This collaboration is gaining attention as a potential model for transitioning university-developed technologies into industrial applications. If successful, the GaN-based e-beam platform may become essential for next-generation semiconductor manufacturing.
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