Quinas Technology Enhances ULTRARAM Development Through Atomic-Scale Processing at KAUST Core Labs

Key Takeaways

Quinas Technology Ltd has achieved a major milestone by using Atomic Layer Etching (ALE) for the fabrication of its ULTRARAM memory technology.
This collaboration with KAUST Core Labs signifies a strong push for advancements in non-volatile memory through quantum engineering.
ULTRARAM aims to combine DRAM-like speeds with data retention capabilities, enhancing energy efficiency and system performance.

Breakthrough in Semiconductor Technology

Quinas Technology Ltd, known for its innovative ULTRARAM non-volatile memory technology, recently announced a significant milestone in its research. The company confirmed the utilization of Atomic Layer Etching (ALE) at KAUST Core Labs in Saudi Arabia to fabricate and refine its intricate quantum-engineered device structures. This development is rooted in over a decade of foundational quantum research undertaken at Lancaster University. The use of Oxford Instruments’ ALE technology allows for precise atomic-scale processing, essential for the sophisticated quantum well heterostructures that are a cornerstone of ULTRARAM.

ULTRARAM represents a groundbreaking memory technology designed to merge the speed of DRAM with non-volatile data retention. It aims to improve both energy efficiency and system performance significantly. Achieving these goals necessitates exceptional control over the interfaces and layer thicknesses within complex III-V semiconductor structures, for which atomic-scale fabrication techniques are ideal.

James Ashforth-Pook, CEO and Co-Founder of Quinas Technology, emphasized the importance of atomic-scale control for the success of ULTRARAM. He stated, “Working with KAUST Core Labs and leveraging Oxford Instruments’ ALE technology gives us access to one of the world’s most advanced and credible environments for low-damage semiconductor R&D.”

KAUST Core Labs is internationally recognized for its expertise in advanced nanofabrication and plasma processing, making it a valuable partner in the research and development of cutting-edge technologies. Dr. Kenneth Kennedy, Director of KAUST Nanofabrication Core Lab, commented on the role of KAUST in supporting advanced semiconductor research, highlighting the facilities designed for low-damage device development and atomic-scale processing tools.

Harriet van der Vliet, Head of Strategic R&D Markets at Oxford Instruments Plasma Technology, also noted the significance of ALE in the precise fabrication of nanoscale devices. She expressed enthusiasm about Quinas utilizing their ALE systems at KAUST, reflecting the facilities’ long-standing relationship with Plasma Technology, which encompasses state-of-the-art Atomic Layer Deposition (ALD) systems.

This milestone indicates Quinas Technology’s deepening involvement in Saudi Arabia’s advanced research ecosystem and aligns with its broader global research and development strategy. The progress made with ULTRARAM will facilitate prototype demonstrations and engages collaboration with industrial partners, foundries, and potential investors.

Quinas Technology is a UK-based semiconductor company focused on developing ULTRARAM™, a compound-semiconductor memory technology tailored for AI and neuromorphic computing applications. Originating from Lancaster University research, ULTRARAM integrates quantum resonant tunneling to create energy-efficient, non-volatile memory architectures.

KAUST Core Labs provide essential research infrastructure, supporting advanced materials science and semiconductor device development. Their facilities enable atomic-scale processing and characterization across a spectrum of emerging technologies.

Oxford Instruments is a frontrunner in providing scientific technology to academic and commercial organizations globally, specializing in materials analysis, healthcare, and semiconductors. Founded in 1959, the company has established itself as a pioneering force driving innovation and supporting global sustainability efforts through advanced R&D investment in new materials and techniques.

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