STMicroelectronics Launches GaN Semiconductors to Enhance Energy Efficiency in AI Servers and Robotics

Key Takeaways

STMicroelectronics launched new 700V PowerGaN devices aimed at enhancing energy efficiency and power density in advanced applications.
The transistors feature low conduction and switching losses, facilitating compact designs for AI servers and robotics.
Devices are offered in various packages with different current ratings, improving integration into existing power-conversion circuits.

Advancements in Power Semiconductor Technology

New gallium nitride (GaN) power semiconductors from STMicroelectronics are set to revolutionize energy efficiency and power density in demanding applications such as AI servers, robotics, and advanced consumer electronics. The introduction of the 700V PowerGaN devices addresses challenges related to increasing power consumption and the limitations of traditional silicon technologies.

Designed for high-efficiency and high-power operation, the 700V PowerGaN devices take advantage of GaN’s intrinsic properties, including low conduction losses, minimal switching losses at elevated frequencies, and zero reverse-recovery charge. These attributes contribute to reduced system size, weight, and operational temperatures, making them ideal for use in various applications, including industrial power supplies and smart grid systems.

Mario Aleo, Executive Vice President of the Power & Discrete Sub-Group at STMicroelectronics, stated that expanding the PowerGaN portfolio with these new 700V devices allows the company to deliver gallium nitride technology benefits in both medium and high-power applications. Future plans include introducing additional voltage ratings and features to further support developments in AI server technologies, humanoid robotics, and intelligent home appliances.

The latest offering consists of seven GaN enhancement-mode transistors (HEMTs) with continuous current ratings ranging from 6 A to 29 A and RDS(on) values from 53 mΩ to 270 mΩ. Each device benefits from ultra-low internal capacitances and low gate charge, achieving performance metrics significantly better than conventional silicon counterparts.

These 700V devices are designed to fit seamlessly into existing power-conversion circuits, either as direct replacements for MOSFETs or to enable new, higher-frequency topologies. Their capability for elevated switching frequencies leads to reduced magnetic and passive component sizes, allowing for a more condensed and efficient power stage with increased power density.

The transistors are available in DPAK, TO-LL, and PowerFLAT surface-mount packages, all of which have proven durability in real-world applications. These package types are widely supported by major electronic design automation libraries and toolchains. Specifically, the TO-LL and PowerFLAT configurations provide a Kelvin source connection, which separates the gate-control circuit from the main power path, enhancing noise immunity, protecting the gate driver, and preserving timing margin.

The new devices include:
– SGT350R70GTK (6 A, 270 mΩ) in a 3-pin DPAK package with a solderable tab.
– SGT070R70HTO (26 A, 53 mΩ) in a leadless TO-LL package optimized for thermal efficiency.
– Multiple PowerFLAT configurations, with continuous current ratings and RDS(on) values ranging from 10 A to 29 A.

Overall, the launch of these 700V PowerGaN devices not only promises significant advances in energy efficiency for various high-demand applications but also reflects STMicroelectronics’ commitment to leading the development of sustainable power conversion technologies.

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